RIE (reactive ion etching) system
This particular system is designed for dry and high resolution engraving. It guarantees a processing with a very high degree of uniformity
Documents
- Suitable for working with inert and reactive gases for the attack of SiO2, Al2O3, Au, Cr2O3, Al, MoSi2, TaSi2, gas.
- Enables small production units with capacities of 10-40 wafers per hour.
- Suitable for irregular shapes.
- Substrate port connected to RF power supply. Uniform gas flow on the surface with good plasma confinement thanks to the pyrex cylinder.
- The substrate holder can be designed to engrave samples with different sizes (from 2 “up to 8” in diameter)
- Temperature: it can be heated up to a maximum of 300 ° C and cooled down to a minimum of -20 ° C.
Related products
Sputtering systems
Sputtering is a low-temperature, high-energy PVD process in which a target is bombarded with ions and vaporized, before being deposited on a substrate in the form of a thin atomic layer.
Evaporation system
The evaporation is a PVD process with low energy and high speed of deposition in which the solid material is finely heated at the rate of the evaporation state.
In a second moment, the vapor thus obtained reaches the substrate, condensing on it.
Cathodic arc evaporation (CAE)
Cathodic arc deposition is a high energy PVD evaporation process with a high deposition rate, mainly used with low heat conduction metals.
RIE (reactive ion etching) system
The reactive ion etching (RIE) system is an ion-assisted reactive method based on a combination of chemical and physical etching that allows the removal of isotropic and anisotropic material.
PVD systems with combined technologies
Different techniques for thin film deposition can be applied in a polyvalent solution in cases where two or more processes are required on the same substrate, always maintaining a clean deposition environment.
Combined technology PVD systems are easy to use and highly performing. They are the perfect solution for academic and industrial, research and training laboratories.
Cluster
Each chamber can be designed to meet specific requirements by combining different processes (eg Sputtering, Evaporation, e-beam…). These systems are multifunctional, expandable, modular and therefore very flexible.
PECVD – Plasma Enhanced CVD
PECVD, which stands for Plasma-enhanced chemical vapor deposition, is a plasma-enhanced chemical thin film deposition process.
PLD systems
PLD
Pulsed Laser Deposition offers a versatile and effective method for depositing thin films with precise control over composition, structure, and properties, making it a valuable technique in materials research and device fabrication.
Gas Sensor Test System
The gas sensor test is a system designed to reproduce, with accuracy and repeatability, the specific environmental conditions required to test gas sensors.
Components for thin film deposition
From magnetron sources and cathode arc evaporation sources to power supplies: thanks to our vast experience in the production of vacuum systems, we offer the market the best components designed and manufactured for thin film deposition.
HI.P.PO.
Thanks to its deposit speed, HI.P.PO. competes with traditional evaporative metallization. Hi.P.Po. it is a magnetron sputtering, therefore more reproducible (repeating the same final characteristics regardless of the production batch), stable (uniformity during deposition) and calibratable (changing parameters), even on plastic (abs, polycarbonate, pmma).