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PECVD systems - Plasma Enhanced CVD

The CVD family consists of PECVD systems for thin film plasma deposition in temperature controlled condition.
The CVD is a batch process chamber ready to accept a load lock chamber for automatic load and unload of the samples. The chamber is provided with lateral flanges to install different sensors and diagnostics, top plate with electrode and mechanical rotary feed through for distance regulation and base plate with connection flange for high vacuum gate valve.
The substrates holder is designed to hold substrates of different sizes till Ø 8“. The process chamber is in SS 316 L. The base electrode is heated up to 700 C°, thermocouple controlled, with a peripheral pumping port to optimise the gas distribution on the substrates. The upper electrode is RF polarized, water cooled, with a gas shower. The CVD system is equipped with turbomolecular pump and PC for pumping cycles.
The RF power generator is a solid state unit with reading of forward and reflecting power. Automatic Matching Network located near the electrode. The System and Process Control Unit is PLC-PC based and allows full automation of the PECVD unit.
The Gas Process control unit consist of flow monitors in the range 0-100, 0-50 or 0-20 sccm, PC controlled, presetting of the operating flow.
The RF power generator is a solid state unit with reading of forward and reflecting power. Automatic Matching Network located near the electrode.

 

Process Technology:

  • pre- and post-treatment of coated surfaces
  • functionalization of polymer surfaces
  • gas permeation barriers
  • self-cleaning layers on glass and ceramics
  • passivation and hermetic barrier coatings on plastics
  • ITO layers and other transparent conductive oxides on glass
  • transparent and low permeability ceramic coatings for polymeric substrates
  • hydrophobic and hydrophilic coatings
  • primers for subsequent coatings
  • plasma activation and cleaning, finishing with suitable thin films

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